cystech electronics corp. spec. no. : c913v8 issued date : 2013.07.08 revised date : 2013.10.30 page no. : 1/9 MTP2611V8 cystek product specification p-channel enhancement mode mosfet MTP2611V8 bv dss -20v i d -45a r dson @v gs =-4.5v, i d =-15.3a 8.8m (typ) r dson @v gs =-2.5v, i d =-13.1a 12.8m (typ) features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTP2611V8-0-t6-g dfn3 3 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel dfn3 3 MTP2611V8 pin 1 g gate s source d drain environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pc s / tape & reel,13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c913v8 issued date : 2013.07.08 revised date : 2013.10.30 page no. : 2/9 MTP2611V8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds -20 gate-source voltage v gs 12 v continuous drain current @ t c =25 c, v gs =-4.5v -45 continuous drain current @ t c =100c, v gs =-4.5v -28 continuous drain current @ t a =25 c, v gs =-4.5v -12 continuous drain current @ t a =70 c, v gs =-4.5v i d -9.6 pulsed drain current i dm -90 *1 a t c =25 31 t c =100 12 t a =25 2.5 *3 total power dissipation t a =70 p d 1.6 *3 w operating junction and storage temp erature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 4 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 *3 c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in 2 copper pad of fr-4 board, t 10s ; 125 c/w when mounted on minimum copper pad. electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -20 - - v gs =0, i d =-250 a v gs(th) -0.4 -0.62 -1.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =12v, v ds =0 i dss - - -1 v ds =-16v, v gs =0 i dss - - -25 a v ds =-16v, v gs =0, tj=125 c - 8.8 11 v gs =-4.5v, i d =-15.3a r ds(on) *1 - 12.8 17 m v gs =-2.5v i d =-13.1a g fs *1 - 22 - s v ds =-10v, i d =-10a dynamic ciss - 4107 - coss - 415 - crss - 368 - pf v ds =-10v, v gs =0, f=1mhz t d(on) *1, 2 - 42 - tr *1, 2 - 23 - t d(off) *1, 2 - 136 - t f *1, 2 - 74 - ns v ds =-10v, i d =-1a, v gs =-4.5v, r g =6
cystech electronics corp. spec. no. : c913v8 issued date : 2013.07.08 revised date : 2013.10.30 page no. : 3/9 MTP2611V8 cystek product specification electrical characteristics(cont.) (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions qg *1, 2 - 44 - qgs *1, 2 - 8.9 - qgd *1, 2 - 11 - nc v ds =-10v, i d =-12a, v gs =-4.5v source-drain diode v sd *1 - -0.67 -1 v i s =-1.5a, v gs =0v trr - 80 - ns qrr - 65 - nc i f =-12a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c913v8 issued date : 2013.07.08 revised date : 2013.10.30 page no. : 4/9 MTP2611V8 cystek product specification typical characteristics typical output characteristics 0 10 20 30 40 50 60 70 80 90 024681 0 10v, 5v, 4.5v, 4v, 3.5v, 3v -v ds , drain-source voltage(v) -i d , drain current(a) 2.5v 2v -v =1.5v gs brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 -i d , drain current(a) r ds( on) , static drain-source on-state resistance(m) v gs =-1.5v v gs =-4.5v v gs =-3v v gs =-2.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20 -i dr , reverse drain current(a) -v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 024681 0 drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =-10v, i d =-15.3a r ds( on) @tj=25c : 8.8m -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =-15.3a
cystech electronics corp. spec. no. : c913v8 issued date : 2013.07.08 revised date : 2013.10.30 page no. : 5/9 MTP2611V8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs( th) , normalized threshold voltage i d =-250 a i d =-1ma maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current(a) dc 1ms 100 s 1s r ds( on) limit t a =25c, tj=150, v gs =-4.5v r ja =50c/w, single pulse 10ms 100ms gate charge characteristics 0 2 4 6 8 10 0 20 40 60 80 100 120 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-10v i d =-12a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-10v pulsed ta=25c maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 175 t j , junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-4.5v, r ja =50c/w
cystech electronics corp. spec. no. : c913v8 issued date : 2013.07.08 revised date : 2013.10.30 page no. : 6/9 MTP2611V8 cystek product specification typical characteristics(cont.) single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 350 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =50c/w typical transfer characteristics 0 10 20 30 40 50 60 70 80 90 012345 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =-10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) z jc (t), thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =50c/w
cystech electronics corp. spec. no. : c913v8 issued date : 2013.07.08 revised date : 2013.10.30 page no. : 7/9 MTP2611V8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c913v8 issued date : 2013.07.08 revised date : 2013.10.30 page no. : 8/9 MTP2611V8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c913v8 issued date : 2013.07.08 revised date : 2013.10.30 page no. : 9/9 MTP2611V8 cystek product specification dfn3 3 dimension marking: 8-lead dfn3 3 plastic package cystek package code: v8 date code s s s g d d d d 261 1 2611 *: typical millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.605 0.850 0.026 0.033 b 0.200 0.400 0.008 0.016 a1 0.152 ref 0.006 ref e 0.550 0.750 0.022 0.030 a2 0.000 0.050 0.000 0.002 l 0.300 0.500 0.012 0.020 d 2.900 3.100 0.114 0.122 l1 0.180 0.480 0.007 0.019 d1 2.300 2.600 0.091 0.102 l2 0.000 0.100 0.000 0.004 e 2.900 3.100 0.114 0.122 l3 0.000 0.100 0.000 0.004 e1 3.150 3.450 0.124 0.136 h 0.315 0.515 0.012 0.020 e2 1.535 1.935 0.060 0.076 9 13 9 13 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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